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Electroluminescent study of the efficiency of silicon heterostructural solar cells


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Resumo

A strong (by more than an order of magnitude) change in the electroluminescence intensity is observed for the first time in high-quality heterojunction solar cells that are based on a single-crystal silicon and have an efficiency of 18 to 20.5%. This effect occurs due to the sharp change in the concentration of the recombination centers on the surface of single-crystal silicon wafers in the course of their pyramidal texturing and also due to the rise in the series resistance. The effect can be used for a quantitative highly sensitive characterization of the texturing, which is a fundamentally important stage in fabricating highly efficient silicon solar cells.

Sobre autores

V. Verbitskii

Ioffe Physical Technical Institute

Autor responsável pela correspondência
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021

I. Panaiotti

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021

S. Nikitin

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021

A. Bobyl’

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021

G. Shelopin

R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194064

D. Andronikov

R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194064

A. Abramov

R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194064

A. Sachenko

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021

E. Terukov

Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194064

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