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Electroluminescent study of the efficiency of silicon heterostructural solar cells


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Abstract

A strong (by more than an order of magnitude) change in the electroluminescence intensity is observed for the first time in high-quality heterojunction solar cells that are based on a single-crystal silicon and have an efficiency of 18 to 20.5%. This effect occurs due to the sharp change in the concentration of the recombination centers on the surface of single-crystal silicon wafers in the course of their pyramidal texturing and also due to the rise in the series resistance. The effect can be used for a quantitative highly sensitive characterization of the texturing, which is a fundamentally important stage in fabricating highly efficient silicon solar cells.

About the authors

V. N. Verbitskii

Ioffe Physical Technical Institute

Author for correspondence.
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021

I. E. Panaiotti

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021

S. E. Nikitin

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021

A. V. Bobyl’

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021

G. G. Shelopin

R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194064

D. A. Andronikov

R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194064

A. S. Abramov

R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194064

A. V. Sachenko

Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021

E. I. Terukov

Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute

Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194064

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