| 期 |
栏目 |
标题 |
文件 |
| 卷 42, 编号 4 (2016) |
Article |
X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy |
|
| 卷 42, 编号 5 (2016) |
Article |
Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers |
|
| 卷 42, 编号 6 (2016) |
Article |
Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter |
|
| 卷 42, 编号 10 (2016) |
Article |
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range |
|
| 卷 42, 编号 12 (2016) |
Article |
Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy |
|
| 卷 43, 编号 3 (2017) |
Article |
Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy |
|
| 卷 43, 编号 5 (2017) |
Article |
Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy |
|
| 卷 44, 编号 2 (2018) |
Article |
Spontaneous Formation of Indium Clusters in InN Epilayers Grown by Molecular-Beam Epitaxy |
|
| 卷 44, 编号 3 (2018) |
Article |
Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy |
|
| 卷 44, 编号 11 (2018) |
Article |
The Effect of Charge Transport Mechanisms on the Efficiency of AlxGa1 – xAs/GaAs Photodiodes |
|
