Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

V. A. Solov’ev; M. Yu. Chernov; B. Ya. Mel’tser; A. N. Semenov; Ya. V. Terent’ev; D. D. Firsov; O. S. Komkov; S. V. Ivanov

doi:10.1134/S1063785016100266

Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

作者: Solov’ev V.A.¹, Chernov M.Y.¹, Mel’tser B.Y.¹, Semenov A.N.¹, Terent’ev Y.V.¹, Firsov D.D.², Komkov O.S.², Ivanov S.V.¹
隶属关系:
1. Ioffe Physical Technical Institute
2. St. Petersburg Electrotechnical University (LETI)
期: 卷 42, 编号 10 (2016)
页面: 1038-1040
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/201729
DOI: https://doi.org/10.1134/S1063785016100266
ID: 201729

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Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions have been grown for the first time by molecular beam epitaxy on GaAs (001) substrates using a graded InAlAs buffer layer with increasing In composition. The given nanoheterostructures demonstrate an intense photoluminescence at a wavelength of over of over 3 μm (80 K), which is shifted toward longer wavelengths as compared with that of the structures without InSb insertions.