Email this article X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy
- Authors: Ratnikov V.V.1, Nechaev D.V.1, Jmerik V.N.1, Ivanov S.V.1
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Affiliations:
- Ioffe Physical Technical Institute
- Issue: Vol 42, No 4 (2016)
- Pages: 419-422
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/198762
- DOI: https://doi.org/10.1134/S1063785016040234
- ID: 198762
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Abstract
The structure of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy (PAMBE) has been studied by X-ray diffractometry techniques. The results show the advantages of using coarse-grained AlN nucleation layers prepared by high-temperature (780°C) adatom-migration-enhanced epitaxy. Using 3.5-nm-thick GaN inserts (obtained by three-dimensional growth under N-rich conditions), it is possible to obtain templates with insignificant residual macrostresses and relatively narrow widths (FWHM) of 0002 and 10\(\bar 1\)5 diffraction reflections.
About the authors
V. V. Ratnikov
Ioffe Physical Technical Institute
Author for correspondence.
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. V. Nechaev
Ioffe Physical Technical Institute
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Jmerik
Ioffe Physical Technical Institute
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Ivanov
Ioffe Physical Technical Institute
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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