| Issue |
Section |
Title |
File |
| Vol 42, No 10 (2016) |
Article |
Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping |
|
| Vol 42, No 10 (2016) |
Article |
A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range |
|
| Vol 43, No 10 (2017) |
Article |
Precision calibration of the silicon doping level in gallium arsenide epitaxial layers |
|
| Vol 43, No 12 (2017) |
Article |
Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots |
|
| Vol 44, No 1 (2018) |
Near-IR Vertical-Cavity Surface-Emitting Lasers (Special Issue) |
High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) |
|
| Vol 44, No 1 (2018) |
Near-IR Vertical-Cavity Surface-Emitting Lasers (Special Issue) |
The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers |
|
| Vol 44, No 1 (2018) |
Near-IR Vertical-Cavity Surface-Emitting Lasers (Special Issue) |
A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm |
|
| Vol 44, No 9 (2018) |
Article |
Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature |
|
| Vol 44, No 10 (2018) |
Article |
Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current |
|
| Vol 45, No 10 (2019) |
Article |
Heterobarrier Varactors with Nonuniformly Doped Modulation Layers |
|
| Vol 45, No 11 (2019) |
Article |
InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics |
|
