A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range


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Abstract

Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting lasers with intracavity contacts (ICC-VCSELs) are carried out. It is shown that the reflectivity of the dielectric DBRs based on SiO2/TiO2 decreases due to the polycrystalline structure of the TiO2 layers, which causes diffusive scattering of light. In contrast, amorphous Ta2O5 layers is characterized by a low surface roughness and low fluctuation in the refractive index. Single-mode ICC-VCSELs in the 980-nm spectral range with dielectric DBR based on SiO2/Ta2O5 with a threshold current less than 0.27 mA, electric resistance of less than 200 Ω, and differential efficiency of more than 0.8 W/A are demonstrated.

About the authors

S. A. Blokhin

Ioffe Physical Technical Institute

Author for correspondence.
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

M. A. Bobrov

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. G. Kuzmenkov

Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021

A. A. Blokhin

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. P. Vasil’ev

Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021

Yu. A. Guseva

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

M. M. Kulagina

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

I. O. Karpovsky

Ioffe Physical Technical Institute; St. Petersburg State Electrotechnical University (LETI)

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376

Yu. M. Zadiranov

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

S. I. Troshkov

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

N. D. Prasolov

Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101

P. N. Brunkov

Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101

V. S. Levitsky

Scientific and Technological Center of Thin-Film Technologies in Power Engineering

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

V. Lisak

Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101

N. A. Maleev

Ioffe Physical Technical Institute

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

V. M. Ustinov

Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures

Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021

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