A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range
- Авторлар: Blokhin S.A.1, Bobrov M.A.1, Kuzmenkov A.G.1,2, Blokhin A.A.1, Vasil’ev A.P.1,2, Guseva Y.A.1, Kulagina M.M.1, Karpovsky I.O.1,3, Zadiranov Y.M.1, Troshkov S.I.1, Prasolov N.D.1,4, Brunkov P.N.1,4, Levitsky V.S.5, Lisak V.1,4, Maleev N.A.1, Ustinov V.M.1,2
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Мекемелер:
- Ioffe Physical Technical Institute
- Scientific and Technological Center of Microelectronics and Submicron Heterostructures
- St. Petersburg State Electrotechnical University (LETI)
- St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Scientific and Technological Center of Thin-Film Technologies in Power Engineering
- Шығарылым: Том 42, № 10 (2016)
- Беттер: 1049-1053
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/201790
- DOI: https://doi.org/10.1134/S1063785016100199
- ID: 201790
Дәйексөз келтіру
Аннотация
Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting lasers with intracavity contacts (ICC-VCSELs) are carried out. It is shown that the reflectivity of the dielectric DBRs based on SiO2/TiO2 decreases due to the polycrystalline structure of the TiO2 layers, which causes diffusive scattering of light. In contrast, amorphous Ta2O5 layers is characterized by a low surface roughness and low fluctuation in the refractive index. Single-mode ICC-VCSELs in the 980-nm spectral range with dielectric DBR based on SiO2/Ta2O5 with a threshold current less than 0.27 mA, electric resistance of less than 200 Ω, and differential efficiency of more than 0.8 W/A are demonstrated.
Авторлар туралы
S. Blokhin
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Bobrov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Kuzmenkov
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
A. Blokhin
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Vasil’ev
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
Yu. Guseva
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kulagina
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Karpovsky
Ioffe Physical Technical Institute; St. Petersburg State Electrotechnical University (LETI)
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376
Yu. Zadiranov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Troshkov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Prasolov
Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
P. Brunkov
Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
V. Levitsky
Scientific and Technological Center of Thin-Film Technologies in Power Engineering
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Lisak
Ioffe Physical Technical Institute; St. Petersburg ITMO National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
N. Maleev
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Ustinov
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
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