Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current
- Авторы: Maleev N.A.1,2, Bobrov M.A.1, Kuzmenkov A.G.1,3, Vasil’ev A.P.1,3, Kulagina M.M.1, Maleev S.N.1, Blokhin S.A.1, Nevedomsky V.N.1, Ustinov V.M.1,2,3
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Учреждения:
- Ioffe Physical Technical Institute
- St. Petersburg Electrotechnical University “LETI”
- Scientific and Technological Center of Microelectronics and Submicron Heterostructures
- Выпуск: Том 44, № 10 (2018)
- Страницы: 862-864
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207957
- DOI: https://doi.org/10.1134/S1063785018100103
- ID: 207957
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Аннотация
The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).
Об авторах
N. Maleev
Ioffe Physical Technical Institute; St. Petersburg Electrotechnical University “LETI”
Автор, ответственный за переписку.
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197022
M. Bobrov
Ioffe Physical Technical Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
A. Kuzmenkov
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
A. Vasil’ev
Ioffe Physical Technical Institute; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
M. Kulagina
Ioffe Physical Technical Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
S. Maleev
Ioffe Physical Technical Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
S. Blokhin
Ioffe Physical Technical Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
V. Nevedomsky
Ioffe Physical Technical Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
V. Ustinov
Ioffe Physical Technical Institute; St. Petersburg Electrotechnical University “LETI”; Scientific and Technological Center of Microelectronics and Submicron Heterostructures
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197022; St. Petersburg, 194021
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