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Том 42, № 3 (2016) A model of axial heterostructure formation in III–V semiconductor nanowires PDF
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Sachenko A., Kryuchenko Y., Kostylyov V., Korkishko R., Sokolovskyi I., Abramov A., Abolmasov S., Andronikov D., Bobyl’ A., Panaiotti I., Terukov E., Titov A., Shvarts M.
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Bobashev S., Zhukov B., Kurakin R., Ponyaev S., Reznikov B.
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Gorokhov M., Kozhevin V., Yavsin D., Gurevich S.
Том 42, № 3 (2016) The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor PDF
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Том 42, № 3 (2016) The influence of hydrodynamic interparticle interactions on the dynamic susceptibility of kerosene-based monodisperse magnetite fluid PDF
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Том 42, № 2 (2016) The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering PDF
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Tumarkin A., Razumov S., Gagarin A., Altynnikov A., Stozharov V., Kaptelov E., Senkevich S., Pronin I.
Том 42, № 2 (2016) Determination of the delay time and feedback strength of a semiconductor laser with optical feedback from time series of radiation intensity PDF
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Zhilyaev Y., Zelenin V., Mokhov E., Nagalyuk S., Poletaev N., Skvortsov A.
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