The Influence of Dipole Polarization of an Emitting Surface on Autoemission Thresholds of a Multitip Silicon Cathode Matrices
- Authors: Yafarov R.K.1
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Affiliations:
- Kotelnikov Institute of Radio-Engineering and Electronics (Saratov Branch)
- Issue: Vol 44, No 7 (2018)
- Pages: 585-587
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207778
- DOI: https://doi.org/10.1134/S1063785018070143
- ID: 207778
Cite item
Abstract
Regularities of changes in the structural-phase composition and morphological and field-emission characteristics of surface-structured silicon wafers with various types of conductivity have been studied. It is shown that the use of a fluorocarbon plasma in the process of structuring, along with a carbon mask coating, allows obtaining preset autoemission currents of silicon cathode matrices when the external electric-field strength varies in a wide range irrespectively of the change of the gain factors of the fields of the emitting protrusions. The dominant role of dipole polarization in autoemission of electrons in surface-modified silicon structures has been established.
About the authors
R. K. Yafarov
Kotelnikov Institute of Radio-Engineering and Electronics (Saratov Branch)
Author for correspondence.
Email: pirpc@yandex.ru
Russian Federation, Saratov, 410019
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