The Influence of Dipole Polarization of an Emitting Surface on Autoemission Thresholds of a Multitip Silicon Cathode Matrices
- Авторлар: Yafarov R.K.1
-
Мекемелер:
- Kotelnikov Institute of Radio-Engineering and Electronics (Saratov Branch)
- Шығарылым: Том 44, № 7 (2018)
- Беттер: 585-587
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207778
- DOI: https://doi.org/10.1134/S1063785018070143
- ID: 207778
Дәйексөз келтіру
Аннотация
Regularities of changes in the structural-phase composition and morphological and field-emission characteristics of surface-structured silicon wafers with various types of conductivity have been studied. It is shown that the use of a fluorocarbon plasma in the process of structuring, along with a carbon mask coating, allows obtaining preset autoemission currents of silicon cathode matrices when the external electric-field strength varies in a wide range irrespectively of the change of the gain factors of the fields of the emitting protrusions. The dominant role of dipole polarization in autoemission of electrons in surface-modified silicon structures has been established.
Авторлар туралы
R. Yafarov
Kotelnikov Institute of Radio-Engineering and Electronics (Saratov Branch)
Хат алмасуға жауапты Автор.
Email: pirpc@yandex.ru
Ресей, Saratov, 410019
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