Effect of Radio-Frequency and Ionizing Radiation on the ATmega8515 Microcontroller
- 作者: Stepovik A.P.1, Shamaev E.Y.1, Otstavnov V.V.1
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隶属关系:
- Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
- 期: 卷 64, 编号 3 (2019)
- 页面: 407-413
- 栏目: Radiophysics
- URL: https://bakhtiniada.ru/1063-7842/article/view/203125
- DOI: https://doi.org/10.1134/S106378421903023X
- ID: 203125
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详细
Effect of ultrabroadband radiation and bremsstrahlung on a complicated device (ATmega8515) placed in a radio-transparent housing is studied. Similar results are obtained in the two cases: short-term malfunction or hangup. A particular scenario depends on the moment of irradiation relative to the phase of the meander generated by the microcontroller. In the presence of bremsstrahlung, the effect depends on the exposure dose, so that an increase in the duration of the generated phase or hangup can be obtained.
作者简介
A. Stepovik
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
编辑信件的主要联系方式.
Email: dep5@vniitf.ru
俄罗斯联邦, Snezhinsk, Chelyabinsk oblast, 456770
E. Shamaev
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
俄罗斯联邦, Snezhinsk, Chelyabinsk oblast, 456770
V. Otstavnov
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
俄罗斯联邦, Snezhinsk, Chelyabinsk oblast, 456770
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