Effect of Radio-Frequency and Ionizing Radiation on the ATmega8515 Microcontroller
- Авторы: Stepovik A.P.1, Shamaev E.Y.1, Otstavnov V.V.1
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Учреждения:
- Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
- Выпуск: Том 64, № 3 (2019)
- Страницы: 407-413
- Раздел: Radiophysics
- URL: https://bakhtiniada.ru/1063-7842/article/view/203125
- DOI: https://doi.org/10.1134/S106378421903023X
- ID: 203125
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Аннотация
Effect of ultrabroadband radiation and bremsstrahlung on a complicated device (ATmega8515) placed in a radio-transparent housing is studied. Similar results are obtained in the two cases: short-term malfunction or hangup. A particular scenario depends on the moment of irradiation relative to the phase of the meander generated by the microcontroller. In the presence of bremsstrahlung, the effect depends on the exposure dose, so that an increase in the duration of the generated phase or hangup can be obtained.
Об авторах
A. Stepovik
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Автор, ответственный за переписку.
Email: dep5@vniitf.ru
Россия, Snezhinsk, Chelyabinsk oblast, 456770
E. Shamaev
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
Россия, Snezhinsk, Chelyabinsk oblast, 456770
V. Otstavnov
Zababakhin Institute of Technical Physics (Russian Federal Nuclear Center)
Email: dep5@vniitf.ru
Россия, Snezhinsk, Chelyabinsk oblast, 456770
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