The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface


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The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2–3 single layers is found to be ~1.4 eV.

作者简介

B. Umirzakov

Tashkent State Technical University

Email: sardor.donaev@gmail.com
乌兹别克斯坦, Tashkent, 100095

R. Ashurov

Tashkent State Technical University

Email: sardor.donaev@gmail.com
乌兹别克斯坦, Tashkent, 100095

S. Donaev

Tashkent State Technical University

编辑信件的主要联系方式.
Email: sardor.donaev@gmail.com
乌兹别克斯坦, Tashkent, 100095

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