Отправить статью по E-mail A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure
- Авторы: Putyato M.A.1, Valisheva N.A.1, Petrushkov M.O.1, Preobrazhenskii V.V.1, Chistokhin I.B.1, Semyagin B.R.1, Emel’yanov E.A.1, Vasev A.V.1, Skachkov A.F.2, Yurko G.I.2, Nesterenko I.I.2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- PAO Saturn
- Выпуск: Том 64, № 7 (2019)
- Страницы: 1010-1016
- Раздел: Solid State Electronics
- URL: https://bakhtiniada.ru/1063-7842/article/view/203819
- DOI: https://doi.org/10.1134/S106378421907020X
- ID: 203819
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Аннотация
Problems arising in fabrication of lightweight flexible solar cells based on heteroepitaxial AIIIBV structures with substrate etching are discussed. Possible solutions are proposed. A tandem lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure was fabricated. Its mass and dimensional characteristics were determined, and bending tests were performed. The specific mass of this solar cell was 0.51 kg/m2, and the allowable bend radius was 36 mm. Its current–voltage curves were measured for the AM0 and AM1.5D spectra at 28.6°C and 25°C, respectively. The cell efficiency was found to be 23.1% and 28.3%.
Об авторах
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
N. Valisheva
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
M. Petrushkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
I. Chistokhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
E. Emel’yanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Vasev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: puma@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Skachkov
PAO Saturn
Email: puma@isp.nsc.ru
Россия, Krasnodar, 350072
G. Yurko
PAO Saturn
Email: puma@isp.nsc.ru
Россия, Krasnodar, 350072
I. Nesterenko
PAO Saturn
Email: puma@isp.nsc.ru
Россия, Krasnodar, 350072
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