电邮这篇文章 Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation
- 作者: Ergashov Y.S.1, Umirzakov B.E.1
-
隶属关系:
- Tashkent State Technical University
- 期: 卷 63, 编号 12 (2018)
- 页面: 1820-1823
- 栏目: Solid State Electronics
- URL: https://bakhtiniada.ru/1063-7842/article/view/202501
- DOI: https://doi.org/10.1134/S1063784218120058
- ID: 202501
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
Bilayer CoSi2/Si/CoSi2/Si system has been obtained by the method of ion implantation, and optimal conditions for implantation and postimplantation annealing have been found. It has been shown that this system forms when the high and low ion energies differ by no less than 15–20 keV. The structures have smooth surface and high crystallinity.
作者简介
Y. Ergashov
Tashkent State Technical University
编辑信件的主要联系方式.
Email: yergashev@mail.ru
乌兹别克斯坦, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: yergashev@mail.ru
乌兹别克斯坦, Tashkent, 100095
补充文件
