Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n+–p-junction and an antireflective porous silicon film

Аннотация

The temperature dependence of forward and reverse branches of the current–voltage characteristic of the semiconductor structure of a photoelectric converter with an n⁺–p-junction based on single-crystal silicon and an antireflective porous silicon film on the front surface has been studied. The presence of several current flow mechanisms has been revealed. It has been demonstrated that traps that emerge in the process of the formation of the porous silicon film have a considerable effect on the current flow processes in the semiconductor structure under consideration.