Отправить статью по E-mail Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by \({\text{O}}_{2}^{ + }\) Ion Implantation
- Авторы: Umirzakov B.E.1, Ruzibaeva M.K.1, Isakhanov Z.A.1, Erkulov R.M.1
-
Учреждения:
- Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
- Выпуск: Том 64, № 6 (2019)
- Страницы: 881-883
- Раздел: Physics of Nanostructures
- URL: https://bakhtiniada.ru/1063-7842/article/view/203632
- DOI: https://doi.org/10.1134/S1063784219060239
- ID: 203632
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The composition and parameters of energy bands in thin SiO2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO2 films grown on thick films, the value of Eg for thin SiO2 films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO2 film, which arise because of the impossibility of heating the system above 700 K.
Об авторах
B. Umirzakov
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Email: za.isakhanov@gmail.com
Узбекистан, Tashkent, 100125
M. Ruzibaeva
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Email: za.isakhanov@gmail.com
Узбекистан, Tashkent, 100125
Z. Isakhanov
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Автор, ответственный за переписку.
Email: za.isakhanov@gmail.com
Узбекистан, Tashkent, 100125
R. Erkulov
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Email: za.isakhanov@gmail.com
Узбекистан, Tashkent, 100125
Дополнительные файлы
