Formation of Nanodimensional SiO 2  Films on the Surface of a Free Si/Cu Film System by   \({\text{O}}_{2}^{ + }\)   Ion Implantation

B. E. Umirzakov; M. K. Ruzibaeva; Z. A. Isakhanov; R. M. Erkulov

doi:10.1134/S1063784219060239

Formation of Nanodimensional SiO₂ Films on the Surface of a Free Si/Cu Film System by \({\text{O}}_{2}^{ + }\) Ion Implantation

作者: Umirzakov B.E.¹, Ruzibaeva M.K.¹, Isakhanov Z.A.¹, Erkulov R.M.¹
隶属关系:
1. Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
期: 卷 64, 编号 6 (2019)
页面: 881-883
栏目: Physics of Nanostructures
URL: https://bakhtiniada.ru/1063-7842/article/view/203632
DOI: https://doi.org/10.1134/S1063784219060239
ID: 203632

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The composition and parameters of energy bands in thin SiO₂ films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO₂ films grown on thick films, the value of E_g for thin SiO₂ films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO₂ film, which arise because of the impossibility of heating the system above 700 K.