🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Effect of the stresses caused by substrate on the electrical conductivity of ferromagnetic manganite lanthanum–barium films


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

This is a complex study of the electrophysical and magnetic characteristics of epitaxial manganite La0.7Ba0.3MnO3 (LBMO) films under conditions of crystal structure stresses caused by misfit in the lattice parameters of the LBMO crystal and a substrate. The substrate used had the lattice parameter smaller than that in the LBMO crystal. It is shown that the temperature dependence of the electrical resistance of the films at low temperatures is not dependent on the existence of stresses in the film and agrees well with the calculation with allowance made for the interaction of carriers with magnetic excitations in the presence of strongly correlated electronic states. The study of the ferromagnetic resonance line indicates an inhomogeneity of the ferromagnetic phase in the LBMO films and the increase in the ferromagnetic resonance line width with decreasing temperature.

Sobre autores

G. Ovsyannikov

Institute of Radio Engineering and Electronics

Autor responsável pela correspondência
Email: gena@hitech.cplire.ru
Rússia, ul. Mokhovaya 11, Moscow, 125009

T. Shaikhulov

Institute of Radio Engineering and Electronics

Email: gena@hitech.cplire.ru
Rússia, ul. Mokhovaya 11, Moscow, 125009

V. Shakhunov

Institute of Radio Engineering and Electronics

Email: gena@hitech.cplire.ru
Rússia, ul. Mokhovaya 11, Moscow, 125009

V. Demidov

Institute of Radio Engineering and Electronics

Email: gena@hitech.cplire.ru
Rússia, ul. Mokhovaya 11, Moscow, 125009

N. Andreev

National University for Science and Technology MISiS

Email: gena@hitech.cplire.ru
Rússia, Leninskii pr. 4, Moscow, 119936

A. Pestun

National University for Science and Technology MISiS

Email: gena@hitech.cplire.ru
Rússia, Leninskii pr. 4, Moscow, 119936

V. Preobrazhenskii

Wave Research Center of the Prokhorov General Physics Institute

Email: gena@hitech.cplire.ru
Rússia, ul. Vavilova 38, Moscow, 117942

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017