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Energy spectrum of electron trapping centers in CuInAsS3


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Resumo

This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range EC–(0.14–0.35) eV.

Sobre autores

E. Zobov

Amirkhanov Institute of Physics

Email: a.mollaev@mail.ru
Rússia, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003

A. Mollaev

Amirkhanov Institute of Physics

Autor responsável pela correspondência
Email: a.mollaev@mail.ru
Rússia, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003

L. Saipulaeva

Amirkhanov Institute of Physics

Email: a.mollaev@mail.ru
Rússia, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003

A. Alibekov

Amirkhanov Institute of Physics

Email: a.mollaev@mail.ru
Rússia, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003

N. Melnikova

Institute of Natural Science

Email: a.mollaev@mail.ru
Rússia, ul. Kuibysheva 48, Yekaterinburg, 620083

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Declaração de direitos autorais © Pleiades Publishing, Ltd., 2016