29Si nuclear spin relaxation in microcrystals of plastically deformed Si: B samples
- Авторы: Koplak O.V.1, Morgunov R.B.1,2
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Учреждения:
- Institute of Problems of Chemical Physics
- Moscow State University of Railway Engineering (MIIT)
- Выпуск: Том 58, № 2 (2016)
- Страницы: 240-246
- Раздел: Semiconductors
- URL: https://bakhtiniada.ru/1063-7834/article/view/196903
- DOI: https://doi.org/10.1134/S1063783416020153
- ID: 196903
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Аннотация
Single crystals and microcrystals Si: B enriched with 29Si isotopes have been studied using nuclear magnetic resonance and electron paramagnetic resonance (EPR) in the temperature range from 300 to 800 K. It has been found that an increase in the temperature from 300 to 500 K leads to a change in the kinetics of the relaxation of the saturated nuclear spin system. At 300 K, the relaxation kinetics corresponds to direct electron–nuclear interaction with inhomogeneously distributed paramagnetic centers introduced by the plastic deformation of the crystals. At 500 K, the spin relaxation occurs through the nuclear spin diffusion and electron–nuclear interaction with an acceptor impurity. It has been revealed that the plastic deformation affects the EPR spectra at 9 K.
Об авторах
O. Koplak
Institute of Problems of Chemical Physics
Email: morgunov2005@yandex.ru
Россия, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432
R. Morgunov
Institute of Problems of Chemical Physics; Moscow State University of Railway Engineering (MIIT)
Автор, ответственный за переписку.
Email: morgunov2005@yandex.ru
Россия, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432; ul. Novosushchevskaya 22, Moscow, 127994
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