The Proximity and Josephson Effects in Niobium Nitride–Aluminum Bilayers
- Autores: Levichev M.Y.1, El’kina A.I.1, Bukharov N.N.2, Petrov Y.V.3, Aladyshkin A.Y.1,4, Vodolazov D.Y.1, Klushin A.M.1
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Afiliações:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Frunze Scientific and Production Association
- St. Petersburg State University
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 61, Nº 9 (2019)
- Páginas: 1544-1548
- Seção: Superconductivity
- URL: https://bakhtiniada.ru/1063-7834/article/view/206088
- DOI: https://doi.org/10.1134/S1063783419090142
- ID: 206088
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Resumo
Highly disordered thin films of niobium nitride and the specific features of the proximity effect in NbN (S)–aluminum (N) bilayers with a large resistivity ratio, ρNbN/ρAl\( \gg \) 1, are studied. It is shown that magnetic screening and the critical current Ic of such SN structures significantly increase compared to the S layer. The observed effect is associated with the induced superconductivity in the N layer due to the proximity effect. The Josephson effect is demonstrated in NbN/Al–NbN–NbN/Al variable thickness bridges made of such SN bilayers.
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Sobre autores
M. Levichev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: a_klushin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
A. El’kina
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: a_klushin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
N. Bukharov
Frunze Scientific and Production Association
Email: a_klushin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
Yu. Petrov
St. Petersburg State University
Email: a_klushin@ipmras.ru
Rússia, St. Petersburg, 199034
A. Aladyshkin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: a_klushin@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
D. Vodolazov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: a_klushin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
A. Klushin
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: a_klushin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
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