New luminescence lines in nanodiamonds obtained by chemical vapor deposition
- Autores: Golubev V.G.1, Grudinkin S.A.1,2, Davydov V.Y.1, Smirnov A.N.1, Feoktistov N.A.1
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Afiliações:
- Ioffe Institute
- National Research University of Information Technologies
- Edição: Volume 59, Nº 12 (2017)
- Páginas: 2407-2412
- Seção: Impurity Centers
- URL: https://bakhtiniada.ru/1063-7834/article/view/201726
- DOI: https://doi.org/10.1134/S1063783417120174
- ID: 201726
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Resumo
The spectral characteristics of the photoluminescence lines detected for nanodiamonds obtained by the reactive ion etching of diamond particles in oxygen plasma, deposited by chemical vapor deposition on a silicon substrate, are studied. At room temperature, narrow lines are observed in the visible and infrared spectral regions, with a full width at half-maximum in the range of 1–2 nm at an almost complete absence of a broadband photoluminescence background signal. At decreasing temperature, the lines narrowed to 0.2–0.6 nm at T = 79 K, and the minimum line width was 0.055 nm at T = 10 K. With increasing temperature, the narrow lines shifted to the long-wavelength region of the spectrum, and their intensity decreased.
Sobre autores
V. Golubev
Ioffe Institute
Email: grudink.gvg@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Grudinkin
Ioffe Institute; National Research University of Information Technologies
Autor responsável pela correspondência
Email: grudink.gvg@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
V. Davydov
Ioffe Institute
Email: grudink.gvg@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: grudink.gvg@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Feoktistov
Ioffe Institute
Email: grudink.gvg@mail.ioffe.ru
Rússia, St. Petersburg, 194021
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