Microwave Impedance of Thin-Film Superconductor–Normal Metal Hybrid Structures with a High Conductivity Ratio
- Авторлар: Ustavshchikov S.S.1,2, Aladyshkin A.Y.1,2, Kurin V.V.1,2, Markelov V.A.1, El’kina A.I.1, Klushin A.M.1, Yunin P.A.1,2, Rogov V.V.1, Vodolazov D.Y.1
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Мекемелер:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 61, № 9 (2019)
- Беттер: 1675-1681
- Бөлім: Surface Physics and Thin Films
- URL: https://bakhtiniada.ru/1063-7834/article/view/206198
- DOI: https://doi.org/10.1134/S1063783419090270
- ID: 206198
Дәйексөз келтіру
Аннотация
The temperature dependence of the linear electrodynamic response of thin-film superconductor (MoN)–normal metal (Al) hybrid structures with a high conductivity ratio in the normal state has been theoretically and experimentally investigated. Low-frequency measurements of the coefficient of mutual induction of two coils with a sample placed between them indicate an increase in the magnetic screening of the superconductor–normal metal (SN) structures with an increase in the Al layer thickness dAl near liquid-helium temperatures. Measurements of the frequency shift δf of a microwave dielectric resonator, brought into contact with the sample, as a function of temperature and dAl showed that (i) the character of the dependence δf(T) depends strongly on dAl and (ii) the resonance frequency shift of SN structures at temperatures close to the critical temperature Tc is not described by dependence const/(1 – T/Tc), which is typical of thin superconducting films. Numerical calculations performed within the Usadel model well describe the observed effects. Thus, these anomalies of the electrodynamic properties of SN structures can be explained by the presence of a minigap in the spectrum of quasiparticles due to the proximity effect in a normal-metal layer, which depends on dAl, and by the high conductivity of the Al layer.
Негізгі сөздер
Авторлар туралы
S. Ustavshchikov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Aladyshkin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Kurin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Markelov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950
A. El’kina
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950
A. Klushin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950
P. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Rogov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950
D. Vodolazov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sergey@ipmras.ru
Ресей, Nizhny Novgorod, 603950
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