Structural and Thermoelectric Properties of Optically Transparent Thin Films Based on Single-Walled Carbon Nanotubes
- Авторлар: Tambasov I.A.1, Voronin A.S.2, Evsevskaya N.P.3, Volochaev M.N.1,4, Fadeev Y.V.5, Krylov A.S.1, Aleksandrovskii A.S.1,5, Luk’yanenko A.V.1,5, Abelyan S.R.1, Tambasova E.V.4
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Мекемелер:
- Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
- Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Sciences and Technologies
- Siberian Federal University
- Шығарылым: Том 60, № 12 (2018)
- Беттер: 2649-2655
- Бөлім: Surface Physics and Thin Films
- URL: https://bakhtiniada.ru/1063-7834/article/view/204685
- DOI: https://doi.org/10.1134/S1063783418120296
- ID: 204685
Дәйексөз келтіру
Аннотация
Thin films have been produced via a spray method from commercially available single-walled carbon nanotubes (SWCNTs). A SWCNT film thickness has ranged from ~10 to ~80 nm. The SWCNT diameter has accepted values of 1.6–1.8 nm. The existence of SWCNTs longer than 10 μm is established. The optimal thickness of a SWCNT thin film is found to be ~15 nm at which the transmittance exceeds 85%. The specific resistance of SWCNT thin films goes from ~1.5 × 10–3 to ~3 × 10–3 Ohm cm at room temperature. The pioneering study of the temperature dependences of the Seebeck coefficient and surface resistance is performed for this type of SWCNT. A surface resistance is found to increase with rising temperature. Furthermore, the Seebeck coefficient of SWCNT thin films weakly depends on temperature. Its value for all samples is evaluated to be ~40 μV/K. According to the sign of the Seebeck coefficient, thin films exhibit hole-type conductivity. Moreover, the power factor of a 15-nm thin SWCNT-film decreases with a temperature increase to 140◦C from the value of approximately ~120 to ~60 μW m–1 K–2. A further rise in temperature has led to a gain in the power factor.
Авторлар туралы
I. Tambasov
Institute of Physics, Siberian Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk
A. Voronin
Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk
N. Evsevskaya
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk
M. Volochaev
Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Sciences and Technologies
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk; Krasnoyarsk
Yu. Fadeev
Siberian Federal University
Email: tambasov_igor@mail.ru
Ресей, Krasnoyarsk
A. Krylov
Institute of Physics, Siberian Branch, Russian Academy of Sciences
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk
A. Aleksandrovskii
Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian Federal University
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk; Krasnoyarsk
A. Luk’yanenko
Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian Federal University
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk; Krasnoyarsk
S. Abelyan
Institute of Physics, Siberian Branch, Russian Academy of Sciences
Email: tambasov_igor@mail.ru
Ресей, Kransoyarsk
E. Tambasova
Siberian State University of Sciences and Technologies
Email: tambasov_igor@mail.ru
Ресей, Krasnoyarsk
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