Optical Spectra of GaSe and GaS Crystals of Different Thicknesses
- Авторлар: Agekyan V.F.1, Serov A.Y.1, Filosofov N.G.1
-
Мекемелер:
- St. Petersburg State University
- Шығарылым: Том 60, № 6 (2018)
- Беттер: 1223-1225
- Бөлім: Semiconductors
- URL: https://bakhtiniada.ru/1063-7834/article/view/203290
- DOI: https://doi.org/10.1134/S1063783418060021
- ID: 203290
Дәйексөз келтіру
Аннотация
The transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The quantum-size shifts of exciton resonances in thin GaSe samples are as high as 12 meV, which is close to the exciton binding energy. The high-energy interband transitions in GaSe and GaS are observed near 3.4 and 3.7 eV, respectively.
Авторлар туралы
V. Agekyan
St. Petersburg State University
Хат алмасуға жауапты Автор.
Email: v.agekyan@spbu.ru
Ресей, St. Petersburg, 199034
A. Serov
St. Petersburg State University
Email: v.agekyan@spbu.ru
Ресей, St. Petersburg, 199034
N. Filosofov
St. Petersburg State University
Email: v.agekyan@spbu.ru
Ресей, St. Petersburg, 199034
Қосымша файлдар
