Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions

Аннотация

The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10¹³–1.7 × 10¹⁵ cm^–2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.