Мақаланы E-mail арқылы жіберу The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films
- Авторлар: Kiselev D.A.1,2, Levashov S.A.1, Sivov A.A.1, Chucheva G.V.1, Afanasiev M.S.1
-
Мекемелер:
- Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- National University of Science and Technology MISiS
- Шығарылым: Том 61, № 10 (2019)
- Беттер: 1910-1914
- Бөлім: Physics of Surface and Thin Films
- URL: https://bakhtiniada.ru/1063-7834/article/view/206389
- DOI: https://doi.org/10.1134/S1063783419100032
- ID: 206389
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
Авторлар туралы
D. Kiselev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS
Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190; Moscow, 119049
S. Levashov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190
A. Sivov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190
G. Chucheva
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190
M. Afanasiev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190
Қосымша файлдар
