Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films


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Abstract

The kinetics of near-edge photoluminescence (PL) in ZnO nanofilms prepared by the atomic layer deposition has been investigated. It is established that the kinetics of near-edge PL in 4-nm films is determined to a great extent by surface 2D-exciton (SX) and biexciton (SXX) complexes. The contribution from surface biexcitons is estimated based on a photostimulated change in the surface potential in ZnO films with different thicknesses. Ultrafast dynamics of surface biexcitons in thin films are revealed. It is shown that biexcitons localized near the surface have the shortest radiative lifetime (less than 100 ps) among all bound exciton complexes, which is explained by the large oscillator strength.

About the authors

I. Kh. Akopyan

St. Petersburg State University

Email: xrul@mail.ru
Russian Federation, St. Petersburg, 199034

M. E. Labzovskaya

St. Petersburg State University

Author for correspondence.
Email: xrul@mail.ru
Russian Federation, St. Petersburg, 199034

B. V. Novikov

St. Petersburg State University

Email: xrul@mail.ru
Russian Federation, St. Petersburg, 199034

V. G. Talalaev

Martin-Luther University, Centre for Innovation Competence SiLi-nano

Email: xrul@mail.ru
Germany, Halle

J. W. Tomm

Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy

Email: xrul@mail.ru
Germany, Berlin

J. Schilling

Martin-Luther University, Centre for Innovation Competence SiLi-nano

Email: xrul@mail.ru
Germany, Halle

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