The Exciton–Polariton Dispersion Law under the Action of Strong Pumping in the Region of the M-Band of Luminescence
- 作者: Khadzhi P.I.1,2, Nad’kin L.Y.2, Markov D.A.2
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隶属关系:
- Institute of Applied Physics
- Taras Shevchenko Transnistria State University
- 期: 卷 60, 编号 4 (2018)
- 页面: 663-668
- 栏目: Semiconductors
- URL: https://bakhtiniada.ru/1063-7834/article/view/202481
- DOI: https://doi.org/10.1134/S1063783418040145
- ID: 202481
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详细
The double-pulse interaction with excitons and biexcitons in semiconductors is studied theoretically. It is shown that the dispersion law of carrier wave has three branches under the action of a powerful pumping in the region of the M-band of luminescence. Values of parameters at which the dispersion law branches can intersect due to the degeneration of the exciton level energy have been found. The effect of a significant change in the force of coupling between the exciton and photon of a weak pulse with a change in the pumping intensity is predicted.
作者简介
P. Khadzhi
Institute of Applied Physics; Taras Shevchenko Transnistria State University
编辑信件的主要联系方式.
Email: mizerok@hotbox.ru
摩尔多瓦共和国, Chişinău, 2028; Tiraspol, 3300
L. Nad’kin
Taras Shevchenko Transnistria State University
Email: mizerok@hotbox.ru
摩尔多瓦共和国, Tiraspol, 3300
D. Markov
Taras Shevchenko Transnistria State University
Email: mizerok@hotbox.ru
摩尔多瓦共和国, Tiraspol, 3300
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