Methods for spin injection managing in inGaAs/GaAs/Al2O3/CoPt spin light-emitting diodes


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Spin injection in CoPt/Al2O3/(Al)GaAs spin light-emitting diodes (SLEDs) was studied. The oscillations of the degree of circular polarization upon variation of a distance between the active region of the SLED and a CoPt ferromagnetic injector were observed. The oscillations depend neither on a SLED material (GaAs or AlGaAs), nor on the type of injected spin-polarized carriers (electrons and holes) and are related to the action of a perpendicular magnetic field on the injected spin-polarized carriers that causes their precession. During the transfer to the active region through a distance of 50–100 nm from the injector, a z–component of a spin changes a phase that is detected experimentally as the change in sign of the degree of circular polarization of luminescence. Conceivably, a source of the internal magnetic field leading to spin precession is the magnetic field of the nonuniformly magnetized CoPt contact.

作者简介

M. Ved’

Physical Technical Research Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

P. Demina

Physical Technical Research Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

A. Zdoroveyshchev

Physical Technical Research Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

A. Kudrin

Physical Technical Research Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

A. Rykov

Physical Technical Research Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

Yu. Kuznetsov

Physical Technical Research Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

M. Dorokhin

Physical Technical Research Institute

编辑信件的主要联系方式.
Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod

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