Electrical conductivity in single crystals of GaSexTe1 – x solid solutions in strong electrical fields

Abstract

This paper presents some results of studying the Poole–Frenkel effect with allowance for shielding in layered GaSe and GaTe single crystals and their solid solutions in strong electrical fields of up to 10⁵ V/cm at temperatures of 103–250 K. According to the relationship \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)} = E\sqrt{\frac{\varepsilon}{4\pi n(0)kT}}\), there exists a linear dependence between \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)}\) and the electrical field E (σ is the electrical conductivity in strong electrical fields, and σ(0) is the electrical conductivity in the ohmic region). The slopes of these lines have been determined at different temperatures (103–250 K) by estimating the concentration of current carriers n(0) = 3 × 10¹³–5 × 10¹⁵ cm^–3 in the ohmic region of the electrical conductivity of solid solutions of layered GaSe_xTe_1–x single crystals (x = 1.00, 0.95, 0.90, 0.80, 0.70, 0.30, 0.20, 0.10, 0).