Comparative analysis of the thickness and electrical conductivity of thin chalcogenide semiconductor films
- 作者: Dan’shina V.V.1, Kalistratova L.F.1
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隶属关系:
- Omsk State Technical University
- 期: 卷 59, 编号 1 (2017)
- 页面: 180-183
- 栏目: Surface Physics and Thin Films
- URL: https://bakhtiniada.ru/1063-7834/article/view/199574
- DOI: https://doi.org/10.1134/S106378341701005X
- ID: 199574
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详细
The structure and thickness of zinc and cadmium chalcogenide semiconductor films are studied by X-ray radiography. The film thickness is shown to be comparable with the half-value layer depth. The electrical conductivity of the films increases upon heating in the hydrogen atmosphere and decreases upon heating in carbon oxide. The opposite trend is observed in the ratio between the electrical conductivity and band gap of the initial and oxidized film surfaces.
作者简介
V. Dan’shina
Omsk State Technical University
编辑信件的主要联系方式.
Email: danshina_v@mail.ru
俄罗斯联邦, Omsk, 644033
L. Kalistratova
Omsk State Technical University
Email: danshina_v@mail.ru
俄罗斯联邦, Omsk, 644033
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