Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide
- 作者: Kitaev Y.E.1,2, Kukushkin S.A.2,3,4, Osipov A.V.2,3
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隶属关系:
- Ioffe Institute
- Institute of Problems of Mechanical Engineering
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Peter the Great Saint-Petersburg Polytechnic University
- 期: 卷 59, 编号 1 (2017)
- 页面: 28-33
- 栏目: Semiconductors
- URL: https://bakhtiniada.ru/1063-7834/article/view/199443
- DOI: https://doi.org/10.1134/S1063783417010164
- ID: 199443
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详细
A symmetry analysis of the crystal structure and the phonon spectrum during continuous topochemical conversion of silicon into silicon carbide has been carried out. The transformation of the symmetry of phonons at high-symmetry points of the Brillouin zone upon the transition from the initial cubic structure of silicon (diamond) through an intermediate cubic structure of silicon carbide to the trigonal structure of SiC has been determined. The selection rules for the infrared and Raman spectra of all the three phases under investigation have been established.
作者简介
Yu. Kitaev
Ioffe Institute; Institute of Problems of Mechanical Engineering
Email: sergey.a.kukushkin@gmail.com
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Bol’shoi pr. 61, St. Petersburg, 199178
S. Kukushkin
Institute of Problems of Mechanical Engineering; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics; Peter the Great Saint-Petersburg Polytechnic University
编辑信件的主要联系方式.
Email: sergey.a.kukushkin@gmail.com
俄罗斯联邦, Bol’shoi pr. 61, St. Petersburg, 199178; Kronverkskii pr. 49, St. Petersburg, 197101; Politekhnicheskaya ul. 29, St. Petersburg, 195251
A. Osipov
Institute of Problems of Mechanical Engineering; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: sergey.a.kukushkin@gmail.com
俄罗斯联邦, Bol’shoi pr. 61, St. Petersburg, 199178; Kronverkskii pr. 49, St. Petersburg, 197101
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