Email this article Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates
- Authors: Alfimova D.L.1, Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Chebotarev S.N.1,2
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Affiliations:
- Southern Scientific Center of the Russian Academy of Sciences
- Platov South-Russian State Polytechnic University (NPI)
- Issue: Vol 58, No 9 (2016)
- Pages: 1751-1757
- Section: Semiconductors
- URL: https://bakhtiniada.ru/1063-7834/article/view/198566
- DOI: https://doi.org/10.1134/S1063783416090055
- ID: 198566
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Abstract
The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of GazIn1–zPxSbyAs1–x–y/InAs isoperiodic heterostructures have been investigated.
About the authors
D. L. Alfimova
Southern Scientific Center of the Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, ul. Chekhova 41, Rostov-on-Don, 344006
L. S. Lunin
Southern Scientific Center of the Russian Academy of Sciences
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, ul. Chekhova 41, Rostov-on-Don, 344006
M. L. Lunina
Southern Scientific Center of the Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, ul. Chekhova 41, Rostov-on-Don, 344006
A. S. Pashchenko
Southern Scientific Center of the Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, ul. Chekhova 41, Rostov-on-Don, 344006
S. N. Chebotarev
Southern Scientific Center of the Russian Academy of Sciences; Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Russian Federation, ul. Chekhova 41, Rostov-on-Don, 344006; ul. Prosveshcheniya 132, Novocherkassk, Rostov oblast, 346428
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