Antiferroelectric films of deuterated betaine phosphate
- Autores: Balashova E.V.1, Krichevtsov B.B.1, Svinarev F.B.1, Zaitseva N.V.1
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Afiliações:
- Ioffe Physical-Technical Institute
- Edição: Volume 58, Nº 7 (2016)
- Páginas: 1397-1406
- Seção: Ferroelectricity
- URL: https://bakhtiniada.ru/1063-7834/article/view/198176
- DOI: https://doi.org/10.1134/S1063783416070052
- ID: 198176
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Resumo
Thin films of partially deuterated betaine phosphate have been grown by the evaporation on Al2O3(110) and NdGaO3(001) substrates with a preliminarily deposited structure of interdigitated electrodes. The grown films have a polycrystalline block structure with characteristic dimensions of blocks of the order of 0.1–1.5 mm. The degree of deuteration of the films D varies in the range of 20–50%. It has been found that, at the antiferroelectric phase transition temperature Tcafe = 100–114 K, the fabricated structures exhibit an anomaly of the electrical capacitance C, which is not accompanied by a change in the dielectric loss tangent tanδ. The strong-signal dielectric response is characterized by the appearance of a ferroelectric nonlinearity at temperatures T >Tcafe, which is transformed into an antiferroelectric nonlinearity at T <Tcafe. With a further decrease in the temperature, double dielectric hysteresis loops appear in the antiferroelectric phase. The dielectric properties of the films have been described within the framework of the Landau-type thermodynamic model taking into account the biquadratic coupling ξP2η2 between the polar order parameter P and the nonpolar order parameter η with a positive coefficient ξ. The E–T phase diagram has been constructed.
Sobre autores
E. Balashova
Ioffe Physical-Technical Institute
Autor responsável pela correspondência
Email: balashova@mail.ioffe.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
B. Krichevtsov
Ioffe Physical-Technical Institute
Email: balashova@mail.ioffe.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
F. Svinarev
Ioffe Physical-Technical Institute
Email: balashova@mail.ioffe.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. Zaitseva
Ioffe Physical-Technical Institute
Email: balashova@mail.ioffe.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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