电邮这篇文章 Distribution of 28Si, 29Si, and 30Si isotopes under plastic deformation in subsurface layers of Si: B crystals
- 作者: Koplak O.V.1,2, Vasil’ev M.A.3, Morgunov R.B.1
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隶属关系:
- Institute of Problems of Chemical Physics
- Taras Shevchenko National University of Kyiv
- Kurdyumov Institute for Metal Physics
- 期: 卷 58, 编号 2 (2016)
- 页面: 247-250
- 栏目: Semiconductors
- URL: https://bakhtiniada.ru/1063-7834/article/view/196906
- DOI: https://doi.org/10.1134/S1063783416020165
- ID: 196906
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详细
The redistribution of 28Si, 29Si, and 30Si isotopes in subsurface layers of Si: B single crystals after their plastic deformation has been revealed. It has been found that the distribution profile of 28Si and 29Si isotopes becomes smoother after deformation, whereas the 30Si isotope distribution remains unchanged. A change in the subsurface profile of the 29SiO oxide is observed, which indicates the migration of the 29Si isotope in the composition of oxygen complexes during plastic deformation.
作者简介
O. Koplak
Institute of Problems of Chemical Physics; Taras Shevchenko National University of Kyiv
Email: morgunov2005@yandex.ru
俄罗斯联邦, ul. Akademika Semenova 1, Moscow oblast, Chernogolovka, 142432; ul. Volodymyrska 64/13, Kyiv, 01601
M. Vasil’ev
Kurdyumov Institute for Metal Physics
Email: morgunov2005@yandex.ru
乌克兰, Vernadsky Blvd. 36, Kiev, 03680
R. Morgunov
Institute of Problems of Chemical Physics
编辑信件的主要联系方式.
Email: morgunov2005@yandex.ru
俄罗斯联邦, ul. Akademika Semenova 1, Moscow oblast, Chernogolovka, 142432
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