电邮这篇文章 Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
- 作者: Makeev M.O.1, Ivanov Y.A.1, Meshkov S.A.1
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隶属关系:
- Bauman State Technical University
- 期: 卷 50, 编号 1 (2016)
- 页面: 83-88
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/196687
- DOI: https://doi.org/10.1134/S1063782616010140
- ID: 196687
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详细
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.
作者简介
M. Makeev
Bauman State Technical University
编辑信件的主要联系方式.
Email: mc.stiv@gmail.com
俄罗斯联邦, Vtoraya Baumanskaya ul. 5, Moscow, 105005
Y. Ivanov
Bauman State Technical University
Email: mc.stiv@gmail.com
俄罗斯联邦, Vtoraya Baumanskaya ul. 5, Moscow, 105005
S. Meshkov
Bauman State Technical University
Email: mc.stiv@gmail.com
俄罗斯联邦, Vtoraya Baumanskaya ul. 5, Moscow, 105005
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