Мақаланы E-mail арқылы жіберу Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
- Авторлар: Makeev M.O.1, Ivanov Y.A.1, Meshkov S.A.1
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Мекемелер:
- Bauman State Technical University
- Шығарылым: Том 50, № 1 (2016)
- Беттер: 83-88
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/196687
- DOI: https://doi.org/10.1134/S1063782616010140
- ID: 196687
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Аннотация
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.
Авторлар туралы
M. Makeev
Bauman State Technical University
Хат алмасуға жауапты Автор.
Email: mc.stiv@gmail.com
Ресей, Vtoraya Baumanskaya ul. 5, Moscow, 105005
Y. Ivanov
Bauman State Technical University
Email: mc.stiv@gmail.com
Ресей, Vtoraya Baumanskaya ul. 5, Moscow, 105005
S. Meshkov
Bauman State Technical University
Email: mc.stiv@gmail.com
Ресей, Vtoraya Baumanskaya ul. 5, Moscow, 105005
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