Email this article Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
- Authors: Obolenskaya E.S.1, Ivanov A.S.1, Pavelyev D.G.1, Kozlov V.A.1,2, Vasilev A.P.3,4
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Research and Engineering Center for Submicron Heterostructures for Microelectronics
- Ioffe Institute
- Issue: Vol 53, No 9 (2019)
- Pages: 1192-1197
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://bakhtiniada.ru/1063-7826/article/view/206763
- DOI: https://doi.org/10.1134/S1063782619090124
- ID: 206763
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Abstract
A comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.
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About the authors
E. S. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. S. Ivanov
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
D. G. Pavelyev
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
V. A. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
A. P. Vasilev
Research and Engineering Center for Submicron Heterostructures for Microelectronics; Ioffe Institute
Email: bess009@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
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