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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Abstract

The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions—orderdisorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex(2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.

About the authors

A. V. Vasev

Institute of Semiconductor Physics

Author for correspondence.
Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

M. A. Putyato

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

V. V. Preobrazhenskii

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. K. Bakarov

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

A. I. Toropov

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

Supplementary files

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