Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing
- Авторлар: Vasev A.V.1, Putyato M.A.1, Preobrazhenskii V.V.1, Bakarov A.K.1, Toropov A.I.1
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Мекемелер:
- Institute of Semiconductor Physics
- Шығарылым: Том 52, № 5 (2018)
- Беттер: 664-666
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://bakhtiniada.ru/1063-7826/article/view/203337
- DOI: https://doi.org/10.1134/S1063782618050354
- ID: 203337
Дәйексөз келтіру
Аннотация
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions—order → disorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex(2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.
Авторлар туралы
A. Vasev
Institute of Semiconductor Physics
Хат алмасуға жауапты Автор.
Email: vasev@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Putyato
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Ресей, Novosibirsk, 630090
V. Preobrazhenskii
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Bakarov
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Toropov
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Ресей, Novosibirsk, 630090
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