Enviar artigo por via de e-mail Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure
- Autores: Zabavichev I.Y.1,2, Potehin A.A.1,2, Puzanov A.S.1,2, Obolenskiy S.V.1,2, Kozlov V.A.3
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Edição: Volume 53, Nº 9 (2019)
- Páginas: 1249-1254
- Seção: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://bakhtiniada.ru/1063-7826/article/view/206950
- DOI: https://doi.org/10.1134/S1063782619090276
- ID: 206950
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Resumo
The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.
Sobre autores
I. Zabavichev
Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”
Autor responsável pela correspondência
Email: zabavichev.rf@gmail.com
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Potehin
Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”
Email: zabavichev.rf@gmail.com
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Puzanov
Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”
Email: zabavichev.rf@gmail.com
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Obolenskiy
Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”
Email: zabavichev.rf@gmail.com
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Kozlov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: zabavichev.rf@gmail.com
Rússia, Nizhny Novgorod, 603087
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