Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3
- Авторлар: Zalessky V.G.1, Kaminski V.V.1, Hirai S.2, Kubota Y.2, Sharenkova N.V.1
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Мекемелер:
- Ioffe Institute
- Muroran Institute of Technology
- Шығарылым: Том 52, № 4 (2018)
- Беттер: 411-413
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7826/article/view/202702
- DOI: https://doi.org/10.1134/S1063782618040322
- ID: 202702
Дәйексөз келтіру
Аннотация
The rare-earth semiconductor β-Ce2S3 compound samples were synthesized and their dielectric permittivity and electrical conductivity were measured in the temperature range 90–400 K. The energy-band structure has been determined. It is shown that the long-known large electrical parameter spread of semiconductor compounds close in composition to Ce2S3 is explained by the structure of impurity donor levels formed by cerium atoms and ions with different ionization degrees.
Авторлар туралы
V. Zalessky
Ioffe Institute
Email: Vladimir.Kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Kaminski
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Vladimir.Kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Hirai
Muroran Institute of Technology
Email: Vladimir.Kaminski@mail.ioffe.ru
Жапония, Muroran, Hokkaido, 050-8585
Y. Kubota
Muroran Institute of Technology
Email: Vladimir.Kaminski@mail.ioffe.ru
Жапония, Muroran, Hokkaido, 050-8585
N. Sharenkova
Ioffe Institute
Email: Vladimir.Kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021
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