Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce 2 S 3

V. G. Zalessky; V. V. Kaminski; S. Hirai; Y. Kubota; N. V. Sharenkova

doi:10.1134/S1063782618040322

Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce₂S₃

Авторы: Zalessky V.G.¹, Kaminski V.V.¹, Hirai S.², Kubota Y.², Sharenkova N.V.¹
Учреждения:
1. Ioffe Institute
2. Muroran Institute of Technology
Выпуск: Том 52, № 4 (2018)
Страницы: 411-413
Раздел: Article
URL: https://bakhtiniada.ru/1063-7826/article/view/202702
DOI: https://doi.org/10.1134/S1063782618040322
ID: 202702

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The rare-earth semiconductor β-Ce₂S₃ compound samples were synthesized and their dielectric permittivity and electrical conductivity were measured in the temperature range 90–400 K. The energy-band structure has been determined. It is shown that the long-known large electrical parameter spread of semiconductor compounds close in composition to Ce₂S₃ is explained by the structure of impurity donor levels formed by cerium atoms and ions with different ionization degrees.