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Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate


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Resumo

We present the results of photoluminescence measurements of AlxGa1 – xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1 – xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents х = 0.3–0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1 – xAs nanowires.

Sobre autores

I. Shtrom

St. Petersburg Academic University, RAS; Institute for Analytical Instrumentation RAS

Autor responsável pela correspondência
Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103

V. Agekyan

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

R. Reznik

St. Petersburg Academic University, RAS; Institute for Analytical Instrumentation RAS

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103

I. Ilkiev

St. Petersburg Academic University, RAS

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021

Yu. Samsonenko

Institute for Analytical Instrumentation RAS

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 190103

D. Krizhkov

Institute for Physics of Microstructures RAS

Email: igorstrohm@mail.ru
Rússia, Nizhny Novgorod, 603950

A. Serov

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

N. Filosofov

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

K. Kotlyar

St. Petersburg Academic University, RAS

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021

G. Cirlin

St. Petersburg Academic University, RAS; Institute for Analytical Instrumentation RAS

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103

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