Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Аннотация

We present the results of photoluminescence measurements of Al_xGa_1 – xAs nanowires, together with the transmission electron microscopy structural analysis. Al_xGa_1 – xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents х = 0.3–0.7. The obtained results demonstrate the presence of wurtzite structure in Al_xGa_1 – xAs nanowires.