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卷 53, 编号 11 (2019)
Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
PDF
(Eng)
卷 52, 编号 9 (2018)
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System
Castro R., Grabko G., Kononov A.
PDF
(Eng)
卷 53, 编号 10 (2019)
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond
Bekin N.
PDF
(Eng)
卷 53, 编号 10 (2019)
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium
Tsyplenkov V., Shastin V.
PDF
(Eng)
卷 52, 编号 16 (2018)
Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer
Lianhong Yang , Guo F., Zhang B., Li Y., Chen D.
PDF
(Eng)
卷 52, 编号 12 (2018)
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
Ilin A., Matsukatova A., Forsh P., Vygranenko Y.
PDF
(Eng)
卷 52, 编号 11 (2018)
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond
Bekin N.
PDF
(Eng)
卷 52, 编号 11 (2018)
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface
Rudin S., Smagina Z., Zinovyev V., Novikov P., Nenashev A., Rodyakina E., Dvurechenskii A.
PDF
(Eng)
卷 52, 编号 11 (2018)
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation
Puzanov A., Obolenskiy S., Kozlov V.
PDF
(Eng)
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