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On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium
Tsyplenkov V., Shastin V.
Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer
Lianhong Yang , Guo F., Zhang B., Li Y., Chen D.
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
Ilin A., Matsukatova A., Forsh P., Vygranenko Y.
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond
Bekin N.
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface
Rudin S., Smagina Z., Zinovyev V., Novikov P., Nenashev A., Rodyakina E., Dvurechenskii A.
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation
Puzanov A., Obolenskiy S., Kozlov V.
Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System
Castro R., Grabko G., Kononov A.
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond
Bekin N.
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