Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

Abstract

The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.